Journal Articles 2022

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Dittmann, R. (Corresponding author)FZJ* ; Menzel, S.FZJ* ; Waser, R.FZJ*
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Advances in physics 70(2), 155-349 (2022) [10.1080/00018732.2022.2084006]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Müller, M. J. ; Yadav, A. ; Persch, C. ; Wahl, S. ; Hoff, F. ; Wuttig, M. (Corresponding author)FZJ*
Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications
Advanced electronic materials 8(8), 2100974 - (2022) [10.1002/aelm.202100974]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Wuttig, M. (Corresponding author)FZJ* ; Schön, C.-F. ; Schumacher, M. ; Robertson, J. ; Golub, P. ; Bousquet, E. ; Gatti, C. ; Raty, J.-Y.
Halide Perovskites: Advanced Photovoltaic Materials Empowered by a Unique Bonding Mechanism
Advanced functional materials 16(2), 2110166 - (2022) [10.1002/adfm.202110166]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Chekol, S. A. (Corresponding author)FZJ* ; Menzel, S.FZJ* ; Ahmad, R. W.FZJ* ; Waser, R.FZJ* ; Hoffmann-Eifert, S.FZJ*
Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors
Advanced functional materials 32(15), 2111242 - (2022) [10.1002/adfm.202111242]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Zahedi, M. ; Lebdeh, M. A. ; Bengel, C. (Corresponding author)FZJ* ; Wouters, D. ; Menzel, S.FZJ* ; Le Gallo, M. ; Sebastian, A. ; Wong, S. ; Hamdioui, S.
MNEMOSENE: Tile Architecture and Simulator for Memristor-based Computation-in-memory
ACM journal on emerging technologies in computing systems 18(3), 1 - 24 (2022) [10.1145/3485824]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Heisig, T. ; Lange, K. ; Gutsche, A.FZJ* ; Goß, K. T.FZJ* ; Hambsch, S.FZJ* ; Locatelli, A. ; Menteş, T. O. ; Genuzio, F. ; Menzel, S.FZJ* ; Dittmann, R. (Corresponding author)FZJ*
Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism
Advanced electronic materials 8(8), 2100936 - (2022) [10.1002/aelm.202100936]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Ntinas, V. ; Ascoli, A. ; Messaris, I. ; Wang, Y.FZJ* ; Rana, V. (Corresponding author)FZJ* ; Menzel, S.FZJ* ; Tetzlaff, R.
Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
IEEE transactions on circuits and systems / 2 69(5), 2473 - 2477 (2022) [10.1109/TCSII.2022.3160304]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Bengel, C. (Corresponding author)FZJ* ; Mohr, J. ; Wiefels, S.FZJ* ; Singh, A. ; Gebregiorgis, A. ; Bishnoi, R. ; Hamdioui, S. ; Waser, R.FZJ* ; Wouters, D. ; Menzel, S.FZJ*
Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
Neuromorphic computing and engineering 2(3), 034001 - (2022) [10.1088/2634-4386/ac6d04]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Stecconi, T. (Corresponding author) ; Guido, R. ; Berchialla, L. ; La Porta, A. ; Weiss, J. ; Popoff, Y. ; Halter, M. ; Sousa, M. ; Horst, F. ; Dávila, D. ; Drechsler, U. ; Dittmann, R.FZJ* ; Offrein, B. J. ; Bragaglia, V.
Filamentary TaO x /HfO 2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing
Advanced electronic materials 8(10), 2200448 - (2022) [10.1002/aelm.202200448]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Gutsche, A. (Corresponding author)FZJ* ; Hambsch, S. ; Branca, N. C. ; Dittmann, R.FZJ* ; Scholz, S. ; Knoch, J.
Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr 0.7 Ca 0.3 MnO 3 / Al devices by employing a two-resistor model
Physical review materials 6(9), 095002 (2022) [10.1103/PhysRevMaterials.6.095002]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Mayahinia, M. ; Singh, A. ; Bengel, C.FZJ* ; Wiefels, S.FZJ* ; Lebdeh, M. A. ; Menzel, S.FZJ* ; Wouters, D. J. ; Gebregiorgis, A. ; Bishnoi, R. ; Joshi, R. ; Hamdioui, S.
A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs
ACM journal on emerging technologies in computing systems 18(2), 1 - 25 (2022) [10.1145/3451212]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Chekol, S. A.FZJ* ; Menzel, S.FZJ* ; Waser, R.FZJ* ; Hoffmann-Eifert, S. (Corresponding author)FZJ*
Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation
Advanced electronic materials 8(11), 2200549 - (2022) [10.1002/aelm.202200549]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Ascoli, A. (Corresponding author) ; Menzel, S.FZJ* ; Rana, V.FZJ* ; Kempen, T.FZJ* ; Messaris, I. ; Demirkol, A. S. ; Schulten, M. ; Siemon, A. ; Tetzlaff, R.
A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification
Advanced electronic materials 8(8), 2200182 - (2022) [10.1002/aelm.202200182]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Schnieders, K.FZJ* ; Funck, C.FZJ* ; Cüppers, F.FZJ* ; Aussen, S.FZJ* ; Kempen, T.FZJ* ; Sarantopoulos, A.FZJ* ; Dittmann, R.FZJ* ; Menzel, S.FZJ* ; Rana, V.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Wiefels, S.FZJ*
Effect of electron conduction on the read noise characteristics in ReRAM devices
APL materials 10(10), 101114 - (2022) [10.1063/5.0109787]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Wördenweber, H.FZJ* ; Karthäuser, S. (Corresponding author)FZJ* ; Grundmann, A. ; Wang, Z.FZJ* ; Aussen, S.FZJ* ; Kalisch, H. ; Vescan, A. ; Heuken, M. ; Waser, R.FZJ* ; Hoffmann-Eifert, S.FZJ*
Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition
Scientific reports 12(1), 18743 (2022) [10.1038/s41598-022-22889-4]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Kopperberg, N. (Corresponding author) ; Wiefels, S.FZJ* ; Hofmann, K.FZJ* ; Otterstedt, J. ; Wouters, D. J. ; Waser, R.FZJ* ; Menzel, S.FZJ*
Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE access 10, 122696 - 122705 (2022) [10.1109/ACCESS.2022.3223657]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Journal Article Wang, Y.FZJ* ; Ascoli, A. ; Tetzlaff, R. ; Rana, V.FZJ* ; Menzel, S.FZJ*
Performance Analysis of Memristive-CNN based on a VCM Device Model
20222022 IEEE International Symposium on Circuits and Systems (ISCAS), AustinAustin, TX, 27 May 2022 - 1 Jun 20222022-05-272022-06-01 ... IEEE International Symposium on Circuits and Systems proceedings 1, 1 (2022) [10.1109/ISCAS48785.2022.9937918]2022   Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Chen, Z. ; Zhang, G. ; Cai, H. ; Bengel, C.FZJ* ; Liu, F. ; Zhao, X. ; Kvatinsky, S. ; Schmidt, H. ; Waser, R.FZJ* ; Menzel, S.FZJ* ; Du, N. (Corresponding author)
Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices
Frontiers in electronic materials 2, 988785 (2022) [10.3389/femat.2022.988785]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Freye, F. ; Lou, J. ; Bengel, C. ; Menzel, S.FZJ* ; Wiefels, S.FZJ* ; Gemmeke, T.
Memristive Devices for Time Domain Compute-in-Memory
IEEE journal on exploratory solid-state computational devices and circuits 8(2), 119 - 127 (2022) [10.1109/JXCDC.2022.3217098]2022   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS