Journal Articles 2022

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Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Advances in physics 70(2), 155-349 () [10.1080/00018732.2022.2084006] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications
Advanced electronic materials 8(8), 2100974 - () [10.1002/aelm.202100974] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Halide Perovskites: Advanced Photovoltaic Materials Empowered by a Unique Bonding Mechanism
Advanced functional materials 16(2), 2110166 - () [10.1002/adfm.202110166] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors
Advanced functional materials 32(15), 2111242 - () [10.1002/adfm.202111242] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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MNEMOSENE: Tile Architecture and Simulator for Memristor-based Computation-in-memory
ACM journal on emerging technologies in computing systems 18(3), 1 - 24 () [10.1145/3485824] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism
Advanced electronic materials 8(8), 2100936 - () [10.1002/aelm.202100936] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Separating the Effects of Band Bending and Covalency in Hybrid Perovskite Oxide Electrocatalyst Bilayers for Water Electrolysis
ACS applied materials & interfaces 14(12), 14129–14136 () [10.1021/acsami.1c20337] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
IEEE transactions on circuits and systems / 2 69(5), 2473 - 2477 () [10.1109/TCSII.2022.3160304] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
Neuromorphic computing and engineering 2(3), 034001 - () [10.1088/2634-4386/ac6d04] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Filamentary TaO x /HfO 2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing
Advanced electronic materials 1, 2200448 - () [10.1002/aelm.202200448]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr 0.7 Ca 0.3 MnO 3 / Al devices by employing a two-resistor model
Physical review materials 6(9), 095002 () [10.1103/PhysRevMaterials.6.095002] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 18.03.2022