Journal Articles 2021

Journal Article Siegel, S. (Corresponding author)FZJ* ; Baeumer, C.FZJ* ; Gutsche, A.FZJ* ; Witzleben, M. ; Waser, R.FZJ* ; Menzel, S.FZJ* ; Dittmann, R.FZJ*
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Advanced electronic materials 7(1), 2000815 (2021) [10.1002/aelm.202000815]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Rieck, J. L. (Corresponding author) ; Hensling, F. V. E. ; Dittmann, R. (Corresponding author)FZJ*
Trade-off between variability and retention of memristive epitaxial SrTiO 3 devices
APL materials 9(2), 021110 - (2021) [10.1063/5.0035707]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Cheng, Y. ; Wahl, S. ; Wuttig, M. (Corresponding author)FZJ*
Metavalent Bonding in Solids: Characteristic Representatives, Their Properties, and Design Options
Physica status solidi / Rapid research letters 15(3), 2000482 (2021) [10.1002/pssr.202000482]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Wiefels, S. (Corresponding author)FZJ* ; Von Witzleben, M. ; Huttemann, M. ; Bottger, U. ; Waser, R.FZJ* ; Menzel, S.FZJ*
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
IEEE transactions on electron devices 68(3), 1024 - 1030 (2021) [10.1109/TED.2021.3049765]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Bengel, C.FZJ* ; Cüppers, F.FZJ* ; Payvand, M. ; Dittmann, R.FZJ* ; Waser, R.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Menzel, S. (Corresponding author)FZJ*
Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns
Frontiers in neuroscience 15, 661856 (2021) [10.3389/fnins.2021.661856]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Funck, C.FZJ* ; Menzel, S. (Corresponding author)FZJ*
A comprehensive model of electron conduction in oxide-based memristive devices
ACS applied electronic materials 3(9), 3674 - 3692 (2021) [10.1021/acsaelm.1c00398]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Gutsche, A. (Corresponding author)FZJ* ; Siegel, S.FZJ* ; Zhang, J. ; Hambsch, S.FZJ* ; Dittmann, R.FZJ*
Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks
Frontiers in neuroscience 15, 661261 (2021) [10.3389/fnins.2021.661261]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article von Witzleben, M. (Corresponding author) ; Walfort, S. ; Waser, R.FZJ* ; Menzel, S.FZJ* ; Bottger, U.
Determining the Electrical Charging Speed Limit of ReRAM Devices
IEEE journal of the Electron Devices Society 9, 667 - 678 (2021) [10.1109/JEDS.2021.3095389]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Poehls, L. M. B. (Corresponding author) ; Fieback, M. C. R. ; Hoffmann-Eifert, S.FZJ* ; Copetti, T. ; Brum, E. ; Menzel, S.FZJ* ; Hamdioui, S. ; Gemmeke, T.
Review of Manufacturing Process Defects and Their Effects on Memristive Devices
Journal of electronic testing 47, 1 (2021) [10.1007/s10836-021-05968-8]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Persch, C. ; Müller, M. J. ; Yadav, A. ; Pries, J. ; Honné, N. ; Kerres, P. ; Wei, S. ; Tanaka, H. ; Fantini, P. ; Varesi, E. ; Pellizzer, F. ; Wuttig, M. (Corresponding author)FZJ*
The potential of chemical bonding to design crystallization and vitrification kinetics
Nature Communications 12(1), 4978 (2021) [10.1038/s41467-021-25258-3]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Agne, M. T. ; Lange, F. R. L. ; Male, J. P. ; Siegert, K. S. ; Volker, H. ; Poltorak, C. ; Poitz, A. ; Siegrist, T. ; Maier, S. ; Snyder, G. J. ; Wuttig, M. (Corresponding author)FZJ*
Disorder-induced Anderson-like localization for bidimensional thermoelectrics optimization
Matter 4(9), 2970 - 2984 (2021) [10.1016/j.matt.2021.07.017]2021 BibTeX | EndNote: XML, Text | RIS

Journal Article von Witzleben, M. (Corresponding author)FZJ* ; Wiefels, S.FZJ* ; Kindsmüller, A. ; Stasner, P. ; Berg, F. ; Cüppers, F.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Menzel, S.FZJ* ; Waser, R.FZJ* ; Böttger, U.
Intrinsic RESET Speed Limit of Valence Change Memories
ACS applied electronic materials 3(12), 5563 - 5572 (2021) [10.1021/acsaelm.1c00981]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Kopperberg, N. (Corresponding author) ; Wiefels, S.FZJ* ; Liberda, S.FZJ* ; Waser, R.FZJ* ; Menzel, S.FZJ*
A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices
ACS applied materials & interfaces 13(48), 58066 - 58075 (2021) [10.1021/acsami.1c14667]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Pries, J. ; Yu, Y. ; Kerres, P. ; Häser, M. ; Steinberg, S. ; Gladisch, F. ; Wei, S. ; Lucas, P. ; Wuttig, M. (Corresponding author)FZJ*
Approaching the Glass Transition Temperature of GeTe by Crystallizing Ge 15 Te 85
Physica status solidi / Rapid research letters 15(3), 2000478 - (2021) [10.1002/pssr.202000478]2021 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Journal Article Dittmann, R. (Corresponding author)FZJ* ; Menzel, S.FZJ* ; Waser, R.FZJ*
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Advances in physics 70(2), 155-349 (2022) [10.1080/00018732.2022.2084006]2022 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Last Modified: 23.01.2023