Journal Articles 2022

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Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Advances in physics 70(2), 155-349 () [10.1080/00018732.2022.2084006] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications
Advanced electronic materials 8(8), 2100974 - () [10.1002/aelm.202100974] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Halide Perovskites: Advanced Photovoltaic Materials Empowered by a Unique Bonding Mechanism
Advanced functional materials 16(2), 2110166 - () [10.1002/adfm.202110166] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors
Advanced functional materials 32(15), 2111242 - () [10.1002/adfm.202111242] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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MNEMOSENE: Tile Architecture and Simulator for Memristor-based Computation-in-memory
ACM journal on emerging technologies in computing systems 18(3), 1 - 24 () [10.1145/3485824] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism
Advanced electronic materials 8(8), 2100936 - () [10.1002/aelm.202100936] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
IEEE transactions on circuits and systems / 2 69(5), 2473 - 2477 () [10.1109/TCSII.2022.3160304] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
Neuromorphic computing and engineering 2(3), 034001 - () [10.1088/2634-4386/ac6d04] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Filamentary TaO x /HfO 2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing
Advanced electronic materials 8(10), 2200448 - () [10.1002/aelm.202200448] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr 0.7 Ca 0.3 MnO 3 / Al devices by employing a two-resistor model
Physical review materials 6(9), 095002 () [10.1103/PhysRevMaterials.6.095002] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs
ACM journal on emerging technologies in computing systems 18(2), 1 - 25 () [10.1145/3451212] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation
Advanced electronic materials 8(11), 2200549 - () [10.1002/aelm.202200549] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification
Advanced electronic materials 8(8), 2200182 - () [10.1002/aelm.202200182] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effect of electron conduction on the read noise characteristics in ReRAM devices
APL materials 10(10), 101114 - () [10.1063/5.0109787] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition
Scientific reports 12(1), 18743 () [10.1038/s41598-022-22889-4] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE access 10, 122696 - 122705 () [10.1109/ACCESS.2022.3223657] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Performance Analysis of Memristive-CNN based on a VCM Device Model
2022 IEEE International Symposium on Circuits and Systems (ISCAS), AustinAustin, TX, 27 May 2022 - 1 Jun 20222022-05-272022-06-01 ... IEEE International Symposium on Circuits and Systems proceedings 1, 1 () [10.1109/ISCAS48785.2022.9937918]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices
Frontiers in electronic materials 2, 988785 () [10.3389/femat.2022.988785] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Memristive Devices for Time Domain Compute-in-Memory
IEEE journal on exploratory solid-state computational devices and circuits 8(2), 119 - 127 () [10.1109/JXCDC.2022.3217098] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance
Review of scientific instruments 93(2), 024705 () [10.1063/5.0080532] Embargoed OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

Last Modified: 25.04.2024