Journal Articles 2023
Journal Article
A Study of the Electroforming Process in 1T1R Memory Arrays
IEEE transactions on computer-aided design of integrated circuits and systems 42(2), 558 - 568 (2023) [10.1109/TCAD.2022.3175947]
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Journal Article
Tailor-made synaptic dynamics based on memristive devices
Frontiers in electronic materials 3, 1061269 (2023) [10.3389/femat.2023.1061269]
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Journal Article
SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
Micromachines 14(3), 571 - (2023) [10.3390/mi14030571]
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Journal Article
Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects
Advanced functional materials 33(22), 2213943 - (2023) [10.1002/adfm.202213943]
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Journal Article
System model of neuromorphic sequence learning on a memristive crossbar array
Neuromorphic computing and engineering 3, 024002 (2023) [10.1088/2634-4386/acca45]
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Journal Article
Review on Resistive Switching Devices Based on Multiferroic BiFeO3
Nanomaterials 13(8), 1325 - (2023) [10.3390/nano13081325]
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Journal Article
Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity
Physical review applied 19(4), 044084 (2023) [10.1103/PhysRevApplied.19.044084]
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Journal Article
Bit slicing approaches for variability aware ReRAM CIM macros
Information technology 0(0), 1 (2023) [10.1515/itit-2023-0018]
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Journal Article
The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure
The journal of physical chemistry / C 127(22), 10878–10887 (2023) [10.1021/acs.jpcc.3c02503]
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Journal Article
Simulating the filament morphology in electrochemical metallization cells
Neuromorphic computing and engineering 3(2), 024010 - (2023) [10.1088/2634-4386/acdbe5]
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Journal Article
Gibbs Adsorption and Zener Pinning Enable MechanicallyRobust High-Performance Bi2Te3-Based ThermoelectricDevices
Advanced science 12(26), 2302688 (2023) [10.1002/advs.202302688]
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Journal Article
Metavalent Bonding in Layered Phase‐Change Memory Materials
Advanced science 10(15), 2300901 (2023) [10.1002/advs.202300901]
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Journal Article
Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
IEEE journal of the Electron Devices Society 11, 432 - 437 (2023) [10.1109/JEDS.2023.3297855]
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Journal Article
A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks
Advanced intelligent systems 1, 2300129 (2023) [10.1002/aisy.202300129]
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Journal Article
Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices
Advanced electronic materials 9(12), 2300520 (2023) [10.1002/aelm.202300520]
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Journal Article
Ternary Łukasiewicz logic using memristive devices
Neuromorphic computing and engineering 3(4), 044001 - (2023) [10.1088/2634-4386/acfbf3]
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Journal Article - Online First
Reliability Aspects of 28 nm BEOL integrated ReRAM
Physica status solidi / A 1, pssa.202300401 (2023) [10.1002/pssa.202300401]
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Journal Article
Sequence learning in a spiking neuronal network with memristive synapses
Neuromorphic computing and engineering 3, 034014 (2023) [10.1088/2634-4386/acf1c4]
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Journal Article - Online First
Dual‐Mode Operation of Epitaxial Hf 0.5 Zr 0.5 O 2 : Ferroelectric and Filamentary‐Type Resistive Switching
Physica status solidi / A 1, pssa.202300409 (2023) [10.1002/pssa.202300409]
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Journal Article - Online First
Eightwise switching mechanism in memristive SrTiO 3 devices and its implications on the device performance
Physica status solidi / A 1, pssa.202300483 (2023) [10.1002/pssa.202300483]
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Journal Article
Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars
Advanced intelligent systems 6(3), 2300579 (2023) [10.1002/aisy.202300579]
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Journal Article - Online First
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Advanced functional materials 1, 2300428 (2023) [10.1002/adfm.202300428]
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Journal Article - Online First
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Physica status solidi / A 1, 2300407 (2023) [10.1002/pssa.202300407]
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Journal Article
Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS 2 and WSe 2 Monolayers
Crystal growth & design 23(3), 1547 - 1558 (2023) [10.1021/acs.cgd.2c01134]
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Journal Article
Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2
Surfaces 6(4), 351 - 363 (2023) [10.3390/surfaces6040025]
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