Towards Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Device

In collaboration with TU Dresden, Dr. Stephan Menzel, Peter Grünberg Institute for Electronic Materials PGI-7 at the Research Center Jülich and head of the Simulation and Modeling work package in NEUROTEC, has developed a simplified version of the JART VCM v1b model [link] for memristive devices and published the results in IEEE Xplore. This simplified model allows for faster simulation time and thus simulation of large networks with memristive devices. Memristive devices are used as non-volatile memory elements and mimic artificial synapses as a device in neuromorphic computer architectures, which establish a weighted connection between artificial neurons in neural networks and store learned information in their resistance values.

Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices (full article)