Influence of Moisture on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
In the issue of npj 2D Materials and Applications, volume 9, Article number: 41 (2025) a research team by Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva, Dennis Braun, Sofia Cruces, Jimin Lee, Sergej Pasko, Simonas Krotkus, Michael Heuken, Stephan Menzel and Max C. Lemme published the article " Influence of Moisture on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors".
n this work, investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions. Our cells exhibit repeatable, bipolar, nonvolatile switching under voltage stress after initial forming, with a switching window >103 under ambient conditions. However, in a vacuum, the forming is suppressed, and hence, no switching is observed. Compact model simulations can reproduce the set kinetics of our cells under ambient conditions and predict highly suppressed resistive switching in a water-deficient environment, supporting the experimental results.
