Intermediate Resistive State in Wafer-Scale MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
In the issue of Advanced Functional Materials n/a (Early view, e26682) a research team by Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofia Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel and Max C. Lemme published the article "Intermediate Resistive State in Wafer-Scale MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications".
In MOCVD MoS2 memristors, a current compliance-regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching. The lateral filament growth drives the transition from the intermediate resistive state (IRS) to the low resistive state (LRS).
DOI: https://doi.org/10.1002/adfm.202526682
