Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses
In the latest issue of IEEE Access (Vol. 13, pp. 120762-120771), a research team by Faisal Munir, Jari Klinkmann, Pascal Stasner, Siyuan Jia, Rainer Waser and Stefan Wiefelsl published the article "Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses".
Filamentary valence c hange mechanism (VCM) devices typically suffer from abrupt SET switching, which limits their use in neuromorphic computing. In our latest study, we demonstrate that applying ultra-short pulses, specifically 50 ps, enables a linear conductance change over 104 pulses in the linear regime, with an R² of 99.5%. This gradual and linear behavior, which was not observed with longer pulses, reflects a distinct shift in the SET switching kinetics. Even devices starting from a low initial conductive state (ICS), previously associated with abrupt transitions, now demonstrate gradual and linear potentiation under short-pulse conditions. This work highlights the potential of sub-100 ps pulses to overcome key limitations in VCM-based ReRAM and advance analog in-memory computing.
