Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2
In the issue of Advanced Electronic Materials, Vol. 12, No. 7 (e00800), a research team by Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C Lemme published the article “Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2”.
2D materials enable controlled ion migration and metal ion filament growth through their van der Waals gaps for memristor device applications. Here, we employ vertically aligned 2D MoS2 (VAMoS₂) for reliable threshold switching (TS) in resistive switching devices. Hererostructures with silicon oxide show faster switching and lower cycle-to-cycle current variability than pure silicon oxide memristors. A variability-aware model attributes this to the formation of ultrathin Ag seed filaments, confined by the VAMoS2 gaps, promising advantages for memory and neuromorphic computing applications.
