Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration
In the issue of npj 2D Materials and Applications 9, 86 (2025), a research team by Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Vasileios Maroufidis Andreadis, Joachim Mayer, Stephan Menzel, Alwin Daus and Max C. Lemme published the article “Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration”.
This work demonstrates the growth of vertically aligned MoS2 (VAMoS2) heterostructures with an amorphous SiOx layer, enabling Ag-ion-migration–based threshold switching. The resulting Ag/SiOx/VAMoS2/Au devices exhibit low switching voltages (~0.63 V), high on-state currents (>200 μA), and fast, repeatable operation over 104 cycles. A physics-based dynamical model identifies two rate-limiting steps governing filament formation, providing insights into fast switching dynamics for future memory and neuromorphic computing applications.
