Journal Articles 2023

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A Study of the Electroforming Process in 1T1R Memory Arrays
IEEE transactions on computer-aided design of integrated circuits and systems 42(2), 558 - 568 () [10.1109/TCAD.2022.3175947] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Tailor-made synaptic dynamics based on memristive devices
Frontiers in electronic materials 3, 1061269 () [10.3389/femat.2023.1061269] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
Micromachines 14(3), 571 - () [10.3390/mi14030571] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects
Advanced functional materials 33(22), 2213943 - () [10.1002/adfm.202213943] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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System model of neuromorphic sequence learning on a memristive crossbar array
Neuromorphic computing and engineering 3, 024002 () [10.1088/2634-4386/acca45] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Review on Resistive Switching Devices Based on Multiferroic BiFeO3
Nanomaterials 13(8), 1325 - () [10.3390/nano13081325] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity
Physical review applied 19(4), 044084 () [10.1103/PhysRevApplied.19.044084] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Bit slicing approaches for variability aware ReRAM CIM macros
Information technology 0(0), 1 () [10.1515/itit-2023-0018] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure
The journal of physical chemistry / C 127(22), 10878–10887 () [10.1021/acs.jpcc.3c02503] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Simulating the filament morphology in electrochemical metallization cells
Neuromorphic computing and engineering 3(2), 024010 - () [10.1088/2634-4386/acdbe5] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Gibbs Adsorption and Zener Pinning Enable MechanicallyRobust High-Performance Bi2Te3-Based ThermoelectricDevices
Advanced science 12(26), 2302688 () [10.1002/advs.202302688] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Metavalent Bonding in Layered Phase‐Change Memory Materials
Advanced science 10(15), 2300901 () [10.1002/advs.202300901] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
IEEE journal of the Electron Devices Society 11, 432 - 437 () [10.1109/JEDS.2023.3297855] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks
Advanced intelligent systems 1, 2300129 () [10.1002/aisy.202300129] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices
Advanced electronic materials 9(12), 2300520 () [10.1002/aelm.202300520] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Ternary Łukasiewicz logic using memristive devices
Neuromorphic computing and engineering 3(4), 044001 - () [10.1088/2634-4386/acfbf3] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Reliability Aspects of 28 nm BEOL integrated ReRAM
Physica status solidi / A 1, pssa.202300401 () [10.1002/pssa.202300401]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Sequence learning in a spiking neuronal network with memristive synapses
Neuromorphic computing and engineering 3, 034014 () [10.1088/2634-4386/acf1c4] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Dual‐Mode Operation of Epitaxial Hf 0.5 Zr 0.5 O 2 : Ferroelectric and Filamentary‐Type Resistive Switching
Physica status solidi / A 1, pssa.202300409 () [10.1002/pssa.202300409]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Eightwise switching mechanism in memristive SrTiO 3 devices and its implications on the device performance
Physica status solidi / A 1, pssa.202300483 () [10.1002/pssa.202300483]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars
Advanced intelligent systems 6(3), 2300579 () [10.1002/aisy.202300579] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Advanced functional materials 1, 2300428 () [10.1002/adfm.202300428] BibTeX | EndNote: XML, Text | RIS

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Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Physica status solidi / A 1, 2300407 () [10.1002/pssa.202300407] BibTeX | EndNote: XML, Text | RIS

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Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS 2 and WSe 2 Monolayers
Crystal growth & design 23(3), 1547 - 1558 () [10.1021/acs.cgd.2c01134]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2
Surfaces 6(4), 351 - 363 () [10.3390/surfaces6040025] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 14.03.2023