Journal Articles 2023

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A Study of the Electroforming Process in 1T1R Memory Arrays
IEEE transactions on computer-aided design of integrated circuits and systems 42(2), 558 - 568 () [10.1109/TCAD.2022.3175947] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Tailor-made synaptic dynamics based on memristive devices
Frontiers in electronic materials 3, 1061269 () [10.3389/femat.2023.1061269] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
Micromachines 14(3), 571 - () [10.3390/mi14030571] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects
Advanced functional materials 33(22), 2213943 - () [10.1002/adfm.202213943] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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System model of neuromorphic sequence learning on a memristive crossbar array
Neuromorphic computing and engineering 3, 024002 () [10.1088/2634-4386/acca45] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Review on Resistive Switching Devices Based on Multiferroic BiFeO3
Nanomaterials 13(8), 1325 - () [10.3390/nano13081325] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity
Physical review applied 19(4), 044084 () [10.1103/PhysRevApplied.19.044084] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Bit slicing approaches for variability aware ReRAM CIM macros
Information technology 0(0), 1 () [10.1515/itit-2023-0018] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure
The journal of physical chemistry / C 127(22), 10878–10887 () [10.1021/acs.jpcc.3c02503] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Simulating the filament morphology in electrochemical metallization cells
Neuromorphic computing and engineering 3(2), 024010 - () [10.1088/2634-4386/acdbe5] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Gibbs Adsorption and Zener Pinning Enable MechanicallyRobust High-Performance Bi2Te3-Based ThermoelectricDevices
Advanced science 12, 2302688 () [10.1002/advs.202302688] DBCoverage BibTeX | EndNote: XML, Text | RIS

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Metavalent Bonding in Layered Phase‐Change Memory Materials
Advanced science 10(15), 2300901 () [10.1002/advs.202300901] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
IEEE journal of the Electron Devices Society 11, 432 - 437 () [10.1109/JEDS.2023.3297855] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 14.03.2023