Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling
In the latest issue of Advanced Electronic Materials (Early View, 2025), a research team by Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein and Valeria Bragaglia published the article "Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling".
A physics-based compact model for Conductive-Metal-Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non-volatile conductance modulation and memory state stabilization enable reliable circuit-level studies, advancing the optimization of neuromorphic and memory systems, driven by device and material physics understanding.
