Band-engineering in area-dependent InGaZnO(IGZO)-based memristive devices

In the latest issue of AFrontiers in Nanotechnology, Vol. 8 – 2026 a research team by Peijia Yuan, Clemens Wittberg, Jonas Deuermeier, Maria Elias Pereira, Yen-Po Liu, David N. Mueller, Asal Kiazadeh and Regina Dittmann published the article “ Band-engineering in area-dependent InGaZnO(IGZO)-based memristive devices”.

In this work, we demonstrate how band engineering through the choice of electrode material enables control of current levels, switching windows, and switching polarity in area-dependent IGZO memristive devices. By combining electrical characterization, XPS band alignment measurements, and numerical simulations, we show that this control originates from changes in the band alignment and resulting electric-field distribution across the device.

DOI: https://doi.org/10.3389/fnano.2026.1870683