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1.	Full factorial analysis of gradual switching in thermally oxidized memristive devices Stasner, P. (Corresponding author) ; Hennen, T. ; Gorbunova, E. ; Garcia Munoz, A. ; ; et al Journal of applied physics 135(23), Seiten/Artikel-Nr.:234901 DOI: 10.1063/5.0214036 Journal Article 2024
2.	CVD graphene-MoS2 Van der Waals heterostructures on the millimeter-scale Rademacher, N. ; Reato, E. ; Völkel, L. ; Grundmann, A. O. ; ; et al Micro and nano engineering 23, Seiten/Artikel-Nr.:100256 DOI: 10.18154/RWTH-2024-05951 Journal Article/Contribution to a book 2024
3.	Simulating the filament morphology in electrochemical metallization cells Buttberg, M. M. ; Valov, I. ; Menzel, S. (Corresponding author) Neuromorphic computing and engineering 3(2), Seiten/Artikel-Nr.:024010 DOI: 10.1088/2634-4386/acdbe5 Journal Article/Contribution to a book 2023
4.	CVD graphene contacts for lateral heterostructure MoS2 field effect transistors Schneider, D. S. ; Lucchesi, L. ; Reato, E. ; Wang, Z. ; ; et al npj 2D materials and applications 8(1), Seiten/Artikel-Nr.:35 DOI: 10.1038/s41699-024-00471-y Journal Article 2024
5.	Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices Stasner, P. (Corresponding author) ; Kopperberg, N. ; Schnieders, K. ; Hennen, T. ; ; et al Nanoscale horizons 9(5), Seiten/Artikel-Nr.:764-774 DOI: 10.18154/RWTH-2024-04071 Journal Article 2024
6.	A DfT Strategy for Guaranteeing ReRAM’s Quality after Manufacturing Santos Copetti, T. (Corresponding author) ; Fieback, M. ; Gemmeke, T. ; Hamdioui, S. ; ; et al Journal of electronic testing : JETTA DOI: 10.1007/s10836-024-06108-8 Journal Article 2024
7.	Accurate evaluation method for HRS retention of VCM ReRAM Kopperberg, N. ; Wouters, D. J. ; Waser, R. ; Menzel, S. ; ; et al APL materials 12(3), Seiten/Artikel-Nr.:031112 DOI: 10.1063/5.0188573 Journal Article 2024
8.	Control of growth kinetics during remote epitaxy of complex oxides on graphene by pulsed laser deposition Wohlgemuth, M. A. (Corresponding author) ; Trstenjak, U. ; Sarantopoulos, A. ; Gunkel, F. ; ; et al APL materials 12(2), Seiten/Artikel-Nr.:021113 DOI: 10.1063/5.0180001 Journal Article 2024
9.	"S3cure" : Scramble, Shuffle and Shambles - Secure Deployment of Weight Matrices in Memristor Crossbar Arrays Galicia, M. (Corresponding author) ; Osman, I. J. (Corresponding author) ; Owusu-Afriyie, C. (Corresponding author) ; Leupers, R. (Corresponding author) Proceedings of International Conference on Neuromorphic Systems 2023 / conference chair: Katie Schuman, University of Tennessee, Knoxville ; program chairs: Melika Payvand (University of Zurich, ETH Zurich), Maryam Parsa ( George Mason University), Seiten/Artikel-Nr: 8 Seiten DOI: 10.1145/3589737.3605964 Contribution to a book/Contribution to a conference proceedings 2023
10.	Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars Brackmann, L. ; Ziegler, T. ; Jafari, A. ; Wouters, D. J. ; ; et al Advanced intelligent systems Seiten/Artikel-Nr.:2300579 DOI: 10.1002/aisy.202300579 Journal Article (Letter) 2023
11.	Demonstration of neuromorphic sequence learning on a memristive array Siegel, S. (Corresponding author) ; Ziegler, T. (Corresponding author) ; Bouhadjar, Y. (Corresponding author) ; Tetzlaff, T. (Corresponding author) ; ; et al Proceedings of the 2023 Annual Neuro-Inspired Computational Elements Conference / Edited by Dhireesha Kudithipudi, Charlotte Frenkel, Suma Cardwell, James B. Aimone, Seiten/Artikel-Nr: 108-114 DOI: 10.18154/RWTH-2023-11367 Contribution to a book/Contribution to a conference proceedings 2023
12.	Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory Wiefels, S. (Corresponding author) ; Kopperberg, N. ; Hofmann, K. ; Otterstedt, J. ; ; et al Physica status solidi / A Seiten/Artikel-Nr.:2300401 DOI: 10.18154/RWTH-2023-10855 Journal Article 2023
13.	Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device Lange, K. (Corresponding author) ; Waser, R. ; Menzel, S. (Corresponding author) Physica status solidi / A Seiten/Artikel-Nr.:2300407 DOI: 10.18154/RWTH-2023-10850 Journal Article 2023
14.	Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems Frahm, T. (Corresponding author) ; Buttberg, M. ; Gvozdev, G. ; Müller, R. A. ; ; et al IEEE journal of the Electron Devices Society 11, Seiten/Artikel-Nr.:432-437 DOI: 10.1109/JEDS.2023.3297855 Journal Article 2023
15.	Fabrication of ultrasmall si encapsulated in silicon dioxide and silicon nitride as alternative to impurity doping Frentzen, M. (Corresponding author) ; Michailow, M. ; Ran, K. ; Wilck, N. ; ; et al Physica status solidi / A 220(13), Seiten/Artikel-Nr.:2300066 DOI: 10.18154/RWTH-2023-06402 Journal Article 2023
16.	Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes Völkel, L. ; Braun, D. ; Belete, M. A. ; Kataria, S. ; ; et al Advanced functional materials Seiten/Artikel-Nr.:2300428 DOI: 10.18154/RWTH-2023-05602 Journal Article 2023
17.	A Study of the Electroforming Process in 1T1R Memory Arrays Son, S. (Corresponding author) ; La Torre, C. ; Kindsmüller, A. ; Rana, V. ; ; et al IEEE transactions on computer-aided design of integrated circuits and systems 42(2), Seiten/Artikel-Nr.:558-568 DOI: 10.1109/TCAD.2022.3175947 Journal Article 2023 & 2022
18.	Memristive Devices for Time Domain Compute-in-Memory Freye, F. (Corresponding author) ; Lou, J. ; Bengel, C. R. ; Menzel, S. ; ; et al IEEE journal on exploratory solid-state computational devices and circuits 8(2), Seiten/Artikel-Nr.:119-127 DOI: 10.1109/JXCDC.2022.3217098 Journal Article 2022
19.	Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances Ahmad, R. W. ; Wouters, D. J. ; Bengel, C. R. ; Waser, R. ; ; et al 2022 IEEE International Symposium on Circuits and Systems (ISCAS) / Randall Geiger, Sung-Mo (Steve) Kang, ISCAS 2022 general co-chairs, Seiten/Artikel-Nr: 91-95 DOI: 10.1109/ISCAS48785.2022.9937570 Contribution to a book/Contribution to a conference proceedings 2022
20.	Endurance of 2 mbit based beol integrated reram Kopperberg, N. (Corresponding author) ; Wiefels, S. ; Hofmann, K. ; Otterstedt, J. ; ; et al IEEE access 10, Seiten/Artikel-Nr.:122696-122705 DOI: 10.1109/ACCESS.2022.3223657 Journal Article (Review Article) 2022
21.	Effect of electron conduction on the read noise characteristics in ReRAM devices Schnieders, K. (Corresponding author) ; Funck, C. ; Cüppers, F. ; Aussen, S. ; ; et al APL materials 10(10), Seiten/Artikel-Nr.:101114 DOI: 10.1063/5.0109787 Journal Article (Letter) 2022
22.	Detailed study on MOCVD of wafer-scale MoS2 monolayers : From nucleation to coalescence Tang, S. (Corresponding author) ; Grundmann, A. O. ; Fiadziushkin, H. ; Ghiami, A. ; ; et al MRS advances 7(30), Seiten/Artikel-Nr.:751-756 DOI: 10.18154/RWTH-2022-07939 Journal Article/Contribution to a book 2022
23.	Stable Al$_{2}$O$_{3}$ Encapsulation of MoS$_{2}$-FETs Enabled by CVD Grown h-BN Piacentini, A. (Corresponding author) ; Marian, D. ; Schneider, D. S. ; González Marín, E. ; ; et al Advanced electronic materials 8(9), Seiten/Artikel-Nr.:2200123 DOI: 10.18154/RWTH-2022-04924 Journal Article 2022
24.	2D materials for future heterogeneous electronics Lemme, M. C. (Corresponding author) ; Akinwande, D. ; Huyghebaert, C. ; Stampfer, C. Nature Communications 13, Seiten/Artikel-Nr.:1392 DOI: 10.1038/s41467-022-29001-4 Journal Article 2022
25.	Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism Heisig, T. ; Lange, K. ; Gutsche, A. ; Goß, K. T. ; ; et al Advanced electronic materials 8(8), Seiten/Artikel-Nr.:2100936 DOI: 10.18154/RWTH-2022-02490 Journal Article/Contribution to a book 2022
26.	Zero‐Bias Power‐Detector Circuits based on MoS$_{2}$ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates Reato, E. ; Palacios, P. ; Uzlu, B. ; Saeed, M. ; ; et al Advanced materials Seiten/Artikel-Nr.:2108469 DOI: 10.18154/RWTH-2022-02071 Journal Article 2022
27.	A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices Kopperberg, N. (Corresponding author) ; Wiefels, S. ; Liberda, S. ; Waser, R. ; ; et al ACS applied materials & interfaces 13(48), Seiten/Artikel-Nr.:58066-58075 DOI: 10.18154/RWTH-2022-00644 Journal Article (Review Article) 2021
28.	Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag-Based Diffusive Memristors Chekol, S. A. (Corresponding author) ; Menzel, S. ; Ahmad, R. W. ; Waser, R. ; ; et al Advanced functional materials 32(15), Seiten/Artikel-Nr.:2111242 DOI: 10.18154/RWTH-2022-00492 Journal Article 2022 & 2021
29.	Intrinsic RESET Speed Limit of Valence Change Memories von Witzleben, M. A. (Corresponding author) ; Wiefels, S. ; Kindsmüller, A. ; Stasner, P. ; ; et al ACS applied electronic materials 3(12), Seiten/Artikel-Nr.:5563-5572 DOI: 10.18154/RWTH-2022-00078 Journal Article 2021
30.	Multi Parameter Admittance Spectroscopy of MOSFETs with 2D MoS$_{2}$ Channels Reato, E. ; Engström, O. ; Wang, Z. ; Grundmann, A. O. ; ; et al 2021 Silicon Nanoelectronics Workshop : June 13, 2021, all virtual, Japan : workshop abstracts / 2021 VLSI Technology Symposium Kyoto, [the Japan Society of Applied Physics], Electron Devices Society, Seiten/Artikel-Nr: S7-7, 81-82 DOI: 10.18154/RWTH-2021-11979 Abstract/Contribution to a book/Contribution to a conference proceedings 2021 & 2022
31.	Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications Müller, M. ; Yadav, A. ; Persch, C. W. ; Wahl, S. ; ; et al Advanced electronic materials 8((), Seiten/Artikel-Nr.:2100974 DOI: 10.18154/RWTH-2021-11894 Journal Article/Contribution to a book 2022 & 2021
32.	Halide Perovskites : Advanced Photovoltaic Materials Empowered by a Unique Bonding Mechanism Wuttig, M. (Corresponding author) ; Schön, C.-F. ; Schumacher, M. ; Robertson, J. ; ; et al Advanced functional materials 32(2), Seiten/Artikel-Nr.:2110166 DOI: 10.18154/RWTH-2021-11443 Journal Article 2022 & 2021
33.	Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride Völkel, L. ; Braun, D. ; Belete, M. A. ; Kataria, S. ; ; et al 2021 Silicon Nanoelectronics Workshop : June 13, 2021, all virtual, Japan : workshop abstracts / 2021 VLSI Technology Symposium Kyoto, [the Japan Society of Applied Physics], Electron Devices Society, Seiten/Artikel-Nr: S7-6, 79-80 DOI: 10.18154/RWTH-2021-11092 Abstract/Contribution to a book/Contribution to a conference proceedings 2021 & 2022
34.	Review of Manufacturing Process Defects and Their Effects on Memristive Devices Poehls, L. M. B. (Corresponding author) ; Fieback, M. C. R. ; Hoffmann-Eifert, S. ; Santos Copetti, T. ; ; et al Journal of electronic testing 37(4), Seiten/Artikel-Nr.:427-437 DOI: 10.18154/RWTH-2021-10244 Journal Article (Review Article) 2021
35.	The potential of chemical bonding to design crystallization and vitrification kinetics Persch, C. W. ; Müller, J. M. ; Yadav, A. ; Pries, J. ; ; et al Nature Communications 12, Seiten/Artikel-Nr.:4978 DOI: 10.18154/RWTH-2021-09440 Journal Article 2021
36.	MoS2 /graphene Lateral Heterostructure Field Effect Transistors Schneider, D. ; Reato, E. ; Lucchesi, L. ; Wang, Z. ; ; et al 2021 Device Research Conference (DRC) : 20-23 June 2021, Seiten/Artikel-Nr: 2 Seiten DOI: 10.18154/RWTH-2021-08097 Contribution to a book/Contribution to a conference proceedings 2021 & 2022
37.	In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches Ziegler, T. ; Waser, R. ; Wouters, D. J. ; Menzel, S. (Corresponding author) Advanced intelligent systems 2(10), Seiten/Artikel-Nr.:2000134 DOI: 10.1002/aisy.202000134 Journal Article 2020
38.	Two-dimensional Materials and Devices : Promising Concepts for Emerging IT Applications Lemme, M. C. (Corresponding author) URL: https://confit.atlas.jp/guide/event/ssdm2020/subject/H-10-01/advanced Abstract 2020
39.	Determining the electrical charging speed limit of ReRAM devices von Witzleben, M. A. (Corresponding author) ; Walfort, S. ; Waser, R. ; Menzel, S. ; ; et al IEEE journal of the Electron Devices Society : J-EDS 9, Seiten/Artikel-Nr.:667-678 DOI: 10.1109/JEDS.2021.3095389 Journal Article 2021
40.	Trade-off between variability and retention of memristive epitaxial SrTiO$_{3}$ devices Rieck, J. L. (Corresponding author) ; Hensling, F. V. E. ; Dittmann, R. APL materials 9(2), Seiten/Artikel-Nr.:021110 DOI: 10.18154/RWTH-2021-03655 Journal Article 2021
41.	Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory Wiefels, S. (Corresponding author) ; von Witzleben, M. A. ; Huttemann, M. ; Böttger, U. ; ; et al IEEE transactions on electron devices 68(3), Seiten/Artikel-Nr.:1024-1030 DOI: 10.18154/RWTH-2021-02225 Journal Article 2021
42.	Approaching the Glass Transition Temperature of GeTe by Crystallizing Ge15Te85 Pries, J. ; Yu, Y. ; Kerres, P. ; Häser, M. ; ; et al Physica status solidi / Rapid research letters Seiten/Artikel-Nr.:2000478 DOI: 10.18154/RWTH-2020-12427 Journal Article 2020
43.	Trade-Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices Siegel, S. (Corresponding author) ; Bäumer, C. ; Gutsche, A. ; von Witzleben, M. A. ; ; et al Advanced electronic materials 7(1), Seiten/Artikel-Nr.:2000815 DOI: 10.18154/RWTH-2020-12365 Journal Article 2020 & 2020
44.	Discovering Electron‐Transfer‐Driven Changes in Chemical Bonding in Lead Chalcogenides (PbX, where X = Te, Se, S, O) Maier, S. ; Steinberg, S. ; Cheng, Y. ; Schön, C.-F. ; ; et al Advanced materials 32(49), Seiten/Artikel-Nr.:2005533 DOI: 10.18154/RWTH-2020-11522 Journal Article 2020
45.	HRS Instability in Oxide-Based Bipolar Resistive Switching Cells Wiefels, S. (Corresponding author) ; Bengel, C. R. ; Kopperberg, N. ; Zhang, K. ; ; et al IEEE transactions on electron devices : ED 67(10), Seiten/Artikel-Nr.:4208-4215 DOI: 10.1109/TED.2020.3018096 Journal Article 2020
46.	Study of the SET switching event of VCM-based memories on a picosecond timescale von Witzleben, M. A. (Corresponding author) ; Kindsmüller, A. ; Menzel, S. ; Waser, R. ; ; et al Journal of applied physics 127, Seiten/Artikel-Nr.:204501 DOI: 10.1063/5.0003840 Journal Article 2020
47.	Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity Belete, M. A. (First author) ; Kataria, S. (Corresponding author) ; Turfanda, A. ; Vaziri, S. ; ; et al Advanced electronic materials 6(3), Seiten/Artikel-Nr.:1900892 DOI: 10.18154/RWTH-2020-00627 Journal Article (Review Article) 2020