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1.	3D kinetic Monte Carlo-based investigation of the influence of dopants on the reliability of VCM ReRAM Kopperberg, N. ; Genua Noguera, D. ; Menzel, S. (Corresponding author) Journal of applied physics 137(17), Seiten/Artikel-Nr.:175105 DOI: 10.18154/RWTH-2025-04378 Journal Article 2025
2.	Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration Liu, X. (Corresponding author) ; Chen, Y. ; Kopperberg, N. ; Solfronk, O. ; ; et al IEEE access 13, Seiten/Artikel-Nr.:44555-44564 DOI: 10.18154/RWTH-2025-03127 Journal Article 2025
3.	Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications Fa, Y. ; Piacentini, A. ; Macco, B. ; Kalisch, H. ; ; et al ACS applied materials & interfaces 17(16), Seiten/Artikel-Nr.:24526-24534 DOI: 10.1021/acsami.4c21596 Journal Article 2025
4.	Memristive ternary Łukasiewicz logic based on reading-based ratioed resistive states (3R) Liu, F. ; Brackmann, L. ; Zhao, X. ; Du, N. ; ; et al Philosophical transactions of the Royal Society of London / A 383(2288), Seiten/Artikel-Nr.:20230397 DOI: 10.1098/rsta.2023.0397 Journal Article/Contribution to a book 2025
5.	Volatile mos2 memristors with lateral silver ion migration for artificial neuron applications Cruces, S. ; Ganeriwala, M. D. ; Lee, J. ; Völkel, L. ; ; et al Small science Seiten/Artikel-Nr.:2400523 DOI: 10.1002/smsc.202400523 Journal Article 2025
6.	Scaling Logic Area With Multitier Standard Cells Freye, F. (Corresponding author) ; Lanius, C. ; Shadmehri, H. H. ; Göhringer, D. ; ; et al IEEE journal on exploratory solid-state computational devices and circuits 10, Seiten/Artikel-Nr.:82-88 DOI: 10.1109/JXCDC.2024.3482464 Journal Article (Review Article) 2024
7.	A Calibratable Model for Fast Energy Estimation of MVM Operations on RRAM Crossbars Cubero Cascante, J. A. (Corresponding author) ; Vaidyanathan, A. (Corresponding author) ; Pelke, R. (Corresponding author) ; Pfeifer, L. K. C. (Corresponding author) ; ; et al 2024 IEEE 6th International Conference on AI Circuits and Systems (AICAS) : proceedings : 22-25 Apr. 2024, Khalifa University, Abu Dhabi, UAE / AICAS 2024 ; IEEE, Khalifa University, CAS - IEEE Circuits and Systems Society ; general chair: Prof. Thanos Stouraitis (Khalifa University, UAE) ; publication chair: Prof. Ibrahim Elfadel (Khalifa University, UAE), Seiten/Artikel-Nr: 537-541 DOI: 10.1109/AICAS59952.2024.10595858 Contribution to a book/Contribution to a conference proceedings 2024
8.	Evaluation Methods for ReRAM Potentiation on Sub-Nanosecond Timescales Munir, F. (Corresponding author) ; Schön, D. ; Menzel, S. ; Stasner, P. ; ; et al IEEE transactions on electron devices : ED 71(11), Seiten/Artikel-Nr.:6691-6697 DOI: 10.18154/RWTH-2024-09841 Journal Article 2024
9.	in situ observation of reversible phase transitions in Gd-doped ceria driven by electron beam irradiation Ran, K. (Corresponding author) ; Zeng, F. ; Jin, L. ; Baumann, S. ; ; et al Nature Communications 15, Seiten/Artikel-Nr.:8156 DOI: 10.1038/s41467-024-52386-3 Journal Article 2024
10.	NVM-Flip: Non-Volatile-Memory BitFlips on the System Level Staudigl, F. ; Thoma, J. P. ; Niesler, C. ; Sturm, K. ; ; et al Proceedings of the 2024 ACM Workshop on Secure and Trustworthy Cyber-Physical Systems, Seiten/Artikel-Nr: 11-20 DOI: 10.18154/RWTH-2024-09185 Contribution to a book/Contribution to a conference proceedings 2024
11.	nAIxt: A Light-Weight Processor Architecture for Efficient Computation of Neuron Models Kauth, K. (Corresponding author) ; Lanius, C. ; Gemmeke, T. Architecture of computing systems : 37th international conference, ARCS 2024, Potsdam, Germany, May 14-16, 2024 : proceedings / Dietmar Fey, Benno Stabernack, Stefan Lankes, Mathias Pacher, Thilo Pionteck, editors, Seiten/Artikel-Nr: 3-17 DOI: 10.18154/RWTH-2024-09106 Contribution to a book/Contribution to a conference proceedings 2024
12.	Resistive Switching Acceleration Induced by Thermal Confinement Sarantopoulos, A. (Corresponding author) ; Lange, K. ; Rivadulla, F. ; Menzel, S. ; ; et al Advanced electronic materials Seiten/Artikel-Nr.:2400555 DOI: 10.18154/RWTH-2024-08361 Journal Article 2024
13.	Full factorial analysis of gradual switching in thermally oxidized memristive devices Stasner, P. (Corresponding author) ; Hennen, T. A. ; Gorbunova, E. ; Garcia Munoz, A. ; ; et al Journal of applied physics 135(23), Seiten/Artikel-Nr.:234901 DOI: 10.18154/RWTH-2024-06434 Journal Article 2024
14.	CVD graphene-MoS2 Van der Waals heterostructures on the millimeter-scale Rademacher, N. ; Reato, E. ; Völkel, L. ; Grundmann, A. O. ; ; et al Micro and nano engineering 23, Seiten/Artikel-Nr.:100256 DOI: 10.18154/RWTH-2024-05951 Journal Article/Contribution to a book 2024
15.	Simulating the filament morphology in electrochemical metallization cells Buttberg, M. M. ; Valov, I. ; Menzel, S. (Corresponding author) Neuromorphic computing and engineering 3(2), Seiten/Artikel-Nr.:024010 DOI: 10.1088/2634-4386/acdbe5 Journal Article/Contribution to a book 2023
16.	CVD graphene contacts for lateral heterostructure MoS2 field effect transistors Schneider, D. S. ; Lucchesi, L. ; Reato, E. ; Wang, Z. ; ; et al npj 2D materials and applications 8(1), Seiten/Artikel-Nr.:35 DOI: 10.1038/s41699-024-00471-y Journal Article 2024
17.	Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices Stasner, P. (Corresponding author) ; Kopperberg, N. ; Schnieders, K. ; Hennen, T. A. ; ; et al Nanoscale horizons 9(5), Seiten/Artikel-Nr.:764-774 DOI: 10.18154/RWTH-2024-04071 Journal Article 2024
18.	A DfT Strategy for Guaranteeing ReRAM’s Quality after Manufacturing Santos Copetti, T. (Corresponding author) ; Fieback, M. ; Gemmeke, T. ; Hamdioui, S. ; ; et al Journal of electronic testing : JETTA 40(2), Seiten/Artikel-Nr.:245-257 DOI: 10.18154/RWTH-2024-03868 Journal Article 2024
19.	Accurate evaluation method for HRS retention of VCM ReRAM Kopperberg, N. ; Wouters, D. J. ; Waser, R. ; Menzel, S. ; ; et al APL materials 12(3), Seiten/Artikel-Nr.:031112 DOI: 10.1063/5.0188573 Journal Article 2024
20.	Control of growth kinetics during remote epitaxy of complex oxides on graphene by pulsed laser deposition Wohlgemuth, M. A. (Corresponding author) ; Trstenjak, U. ; Sarantopoulos, A. ; Gunkel, F. ; ; et al APL materials 12(2), Seiten/Artikel-Nr.:021113 DOI: 10.1063/5.0180001 Journal Article 2024
21.	"S3cure" : Scramble, Shuffle and Shambles - Secure Deployment of Weight Matrices in Memristor Crossbar Arrays Galicia, M. (Corresponding author) ; Osman, I. J. (Corresponding author) ; Owusu-Afriyie, C. (Corresponding author) ; Leupers, R. (Corresponding author) Proceedings of International Conference on Neuromorphic Systems 2023 / conference chair: Katie Schuman, University of Tennessee, Knoxville ; program chairs: Melika Payvand (University of Zurich, ETH Zurich), Maryam Parsa ( George Mason University), Seiten/Artikel-Nr: 8 Seiten DOI: 10.1145/3589737.3605964 Contribution to a book/Contribution to a conference proceedings 2023
22.	Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars Brackmann, L. ; Ziegler, T. ; Jafari, A. ; Wouters, D. J. ; ; et al Advanced intelligent systems Seiten/Artikel-Nr.:2300579 DOI: 10.1002/aisy.202300579 Journal Article (Letter) 2023
23.	Demonstration of neuromorphic sequence learning on a memristive array Siegel, S. (Corresponding author) ; Ziegler, T. (Corresponding author) ; Bouhadjar, Y. (Corresponding author) ; Tetzlaff, T. (Corresponding author) ; ; et al Proceedings of the 2023 Annual Neuro-Inspired Computational Elements Conference / Edited by Dhireesha Kudithipudi, Charlotte Frenkel, Suma Cardwell, James B. Aimone, Seiten/Artikel-Nr: 108-114 DOI: 10.18154/RWTH-2023-11367 Contribution to a book/Contribution to a conference proceedings 2023
24.	Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory Wiefels, S. (Corresponding author) ; Kopperberg, N. ; Hofmann, K. ; Otterstedt, J. ; ; et al Physica status solidi / A 221(22), Seiten/Artikel-Nr.:2300401 DOI: 10.18154/RWTH-2023-10855 Journal Article/Contribution to a book 2024 & 2023
25.	Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device Lange, K. (Corresponding author) ; Waser, R. ; Menzel, S. (Corresponding author) Physica status solidi / A 221(22), Seiten/Artikel-Nr.:2300407 DOI: 10.18154/RWTH-2023-10850 Journal Article/Contribution to a book 2024 & 2023
26.	Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC Ghiami, A. (Corresponding author) ; Sun, T. ; Fiadziushkin, H. ; Tang, S. ; ; et al Crystals 13(10), Seiten/Artikel-Nr.:1474 DOI: 10.3390/cryst13101474 Journal Article/Contribution to a book 2023
27.	Impact of carbon impurities on air stability of MOCVD 2D-MoS2 Ghiami, A. (Corresponding author) ; Grundmann, A. O. ; Tang, S. ; Fiadziushkin, H. ; ; et al Surfaces 6(4), Seiten/Artikel-Nr.:351-363 DOI: 10.3390/surfaces6040025 Journal Article 2023
28.	Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems Frahm, T. (Corresponding author) ; Buttberg, M. ; Gvozdev, G. ; Müller, R. A. ; ; et al IEEE journal of the Electron Devices Society 11, Seiten/Artikel-Nr.:432-437 DOI: 10.1109/JEDS.2023.3297855 Journal Article 2023
29.	Fabrication of ultrasmall si encapsulated in silicon dioxide and silicon nitride as alternative to impurity doping Frentzen, M. (Corresponding author) ; Michailow, M. ; Ran, K. ; Wilck, N. ; ; et al Physica status solidi / A 220(13), Seiten/Artikel-Nr.:2300066 DOI: 10.18154/RWTH-2023-06402 Journal Article 2023
30.	Scalable Time-Domain Compute-in-Memory BNN Engine with 2.06 POPS/W Energy Efficiency for Edge-AI Devices Lou, J. (Corresponding author) ; Freye, F. (Corresponding author) ; Lanius, C. (Corresponding author) ; Gemmeke, T. (Corresponding author) Proceedings of the Great Lakes Symposium on VLSI 2023, Seiten/Artikel-Nr: 665-670 DOI: 10.1145/3583781.3590220 Contribution to a book/Contribution to a conference proceedings 2023
31.	Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes Völkel, L. ; Braun, D. ; Belete, M. A. ; Kataria, S. ; ; et al Advanced functional materials Seiten/Artikel-Nr.:2300428 DOI: 10.18154/RWTH-2023-05602 Journal Article 2023
32.	A Study of the Electroforming Process in 1T1R Memory Arrays Son, S. (Corresponding author) ; La Torre, C. ; Kindsmüller, A. ; Rana, V. ; ; et al IEEE transactions on computer-aided design of integrated circuits and systems 42(2), Seiten/Artikel-Nr.:558-568 DOI: 10.1109/TCAD.2022.3175947 Journal Article 2023 & 2022
33.	Memristive Devices for Time Domain Compute-in-Memory Freye, F. (Corresponding author) ; Lou, J. ; Bengel, C. R. ; Menzel, S. ; ; et al IEEE journal on exploratory solid-state computational devices and circuits 8(2), Seiten/Artikel-Nr.:119-127 DOI: 10.1109/JXCDC.2022.3217098 Journal Article 2022
34.	Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition Tang, H. ; Pasko, S. ; Krotkus, S. ; Anders, T. ; ; et al Journal of crystal growth 608, Seiten/Artikel-Nr.:127111 DOI: 10.1016/j.jcrysgro.2023.127111 Journal Article/Contribution to a conference proceedings 2023
35.	Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances Ahmad, R. W. ; Wouters, D. J. ; Bengel, C. R. ; Waser, R. ; ; et al 2022 IEEE International Symposium on Circuits and Systems (ISCAS) / Randall Geiger, Sung-Mo (Steve) Kang, ISCAS 2022 general co-chairs, Seiten/Artikel-Nr: 91-95 DOI: 10.1109/ISCAS48785.2022.9937570 Contribution to a book/Contribution to a conference proceedings 2022
36.	Endurance of 2 mbit based beol integrated reram Kopperberg, N. (Corresponding author) ; Wiefels, S. ; Hofmann, K. ; Otterstedt, J. ; ; et al IEEE access 10, Seiten/Artikel-Nr.:122696-122705 DOI: 10.1109/ACCESS.2022.3223657 Journal Article (Review Article) 2022
37.	Effect of electron conduction on the read noise characteristics in ReRAM devices Schnieders, K. (Corresponding author) ; Funck, C. ; Cüppers, F. ; Aussen, S. ; ; et al APL materials 10(10), Seiten/Artikel-Nr.:101114 DOI: 10.1063/5.0109787 Journal Article (Letter) 2022
38.	Detailed study on MOCVD of wafer-scale MoS2 monolayers : From nucleation to coalescence Tang, S. (Corresponding author) ; Grundmann, A. O. ; Fiadziushkin, H. ; Ghiami, A. ; ; et al MRS advances 7(30), Seiten/Artikel-Nr.:751-756 DOI: 10.18154/RWTH-2022-07939 Journal Article/Contribution to a book 2022
39.	Stable Al$_{2}$O$_{3}$ Encapsulation of MoS$_{2}$-FETs Enabled by CVD Grown h-BN Piacentini, A. (Corresponding author) ; Marian, D. ; Schneider, D. S. ; González Marín, E. ; ; et al Advanced electronic materials 8(9), Seiten/Artikel-Nr.:2200123 DOI: 10.18154/RWTH-2022-04924 Journal Article 2022
40.	2D materials for future heterogeneous electronics Lemme, M. C. (Corresponding author) ; Akinwande, D. ; Huyghebaert, C. ; Stampfer, C. Nature Communications 13, Seiten/Artikel-Nr.:1392 DOI: 10.1038/s41467-022-29001-4 Journal Article 2022
41.	Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism Heisig, T. ; Lange, K. ; Gutsche, A. ; Goß, K. T. ; ; et al Advanced electronic materials 8(8), Seiten/Artikel-Nr.:2100936 DOI: 10.18154/RWTH-2022-02490 Journal Article/Contribution to a book 2022
42.	Zero‐Bias Power‐Detector Circuits based on MoS$_{2}$ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates Reato, E. ; Palacios, P. ; Uzlu, B. ; Saeed, M. ; ; et al Advanced materials Seiten/Artikel-Nr.:2108469 DOI: 10.18154/RWTH-2022-02071 Journal Article 2022
43.	A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices Kopperberg, N. (Corresponding author) ; Wiefels, S. ; Liberda, S. ; Waser, R. ; ; et al ACS applied materials & interfaces 13(48), Seiten/Artikel-Nr.:58066-58075 DOI: 10.18154/RWTH-2022-00644 Journal Article (Review Article) 2021
44.	Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag-Based Diffusive Memristors Chekol, S. A. (Corresponding author) ; Menzel, S. ; Ahmad, R. W. ; Waser, R. ; ; et al Advanced functional materials 32(15), Seiten/Artikel-Nr.:2111242 DOI: 10.18154/RWTH-2022-00492 Journal Article 2022 & 2021
45.	Intrinsic RESET Speed Limit of Valence Change Memories von Witzleben, M. A. (Corresponding author) ; Wiefels, S. ; Kindsmüller, A. ; Stasner, P. ; ; et al ACS applied electronic materials 3(12), Seiten/Artikel-Nr.:5563-5572 DOI: 10.18154/RWTH-2022-00078 Journal Article 2021
46.	Multi Parameter Admittance Spectroscopy of MOSFETs with 2D MoS$_{2}$ Channels Reato, E. ; Engström, O. ; Wang, Z. ; Grundmann, A. O. ; ; et al 2021 Silicon Nanoelectronics Workshop : June 13, 2021, all virtual, Japan : workshop abstracts / 2021 VLSI Technology Symposium Kyoto, [the Japan Society of Applied Physics], Electron Devices Society, Seiten/Artikel-Nr: S7-7, 81-82 DOI: 10.18154/RWTH-2021-11979 Abstract/Contribution to a book/Contribution to a conference proceedings 2021 & 2022
47.	Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications Müller, M. ; Yadav, A. ; Persch, C. W. ; Wahl, S. ; ; et al Advanced electronic materials 8((), Seiten/Artikel-Nr.:2100974 DOI: 10.18154/RWTH-2021-11894 Journal Article/Contribution to a book 2022 & 2021
48.	Halide Perovskites : Advanced Photovoltaic Materials Empowered by a Unique Bonding Mechanism Wuttig, M. (Corresponding author) ; Schön, C.-F. ; Schumacher, M. ; Robertson, J. ; ; et al Advanced functional materials 32(2), Seiten/Artikel-Nr.:2110166 DOI: 10.18154/RWTH-2021-11443 Journal Article 2022 & 2021
49.	Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride Völkel, L. ; Braun, D. ; Belete, M. A. ; Kataria, S. ; ; et al 2021 Silicon Nanoelectronics Workshop : June 13, 2021, all virtual, Japan : workshop abstracts / 2021 VLSI Technology Symposium Kyoto, [the Japan Society of Applied Physics], Electron Devices Society, Seiten/Artikel-Nr: S7-6, 79-80 DOI: 10.18154/RWTH-2021-11092 Abstract/Contribution to a book/Contribution to a conference proceedings 2021 & 2022
50.	Review of Manufacturing Process Defects and Their Effects on Memristive Devices Poehls, L. M. B. (Corresponding author) ; Fieback, M. C. R. ; Hoffmann-Eifert, S. ; Santos Copetti, T. ; ; et al Journal of electronic testing 37(4), Seiten/Artikel-Nr.:427-437 DOI: 10.18154/RWTH-2021-10244 Journal Article (Review Article) 2021
51.	The potential of chemical bonding to design crystallization and vitrification kinetics Persch, C. W. ; Müller, J. M. ; Yadav, A. ; Pries, J. ; ; et al Nature Communications 12, Seiten/Artikel-Nr.:4978 DOI: 10.18154/RWTH-2021-09440 Journal Article 2021
52.	MoS2 /graphene Lateral Heterostructure Field Effect Transistors Schneider, D. ; Reato, E. ; Lucchesi, L. ; Wang, Z. ; ; et al 2021 Device Research Conference (DRC) : 20-23 June 2021, Seiten/Artikel-Nr: 2 Seiten DOI: 10.18154/RWTH-2021-08097 Contribution to a book/Contribution to a conference proceedings 2021 & 2022
53.	In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches Ziegler, T. ; Waser, R. ; Wouters, D. J. ; Menzel, S. (Corresponding author) Advanced intelligent systems 2(10), Seiten/Artikel-Nr.:2000134 DOI: 10.1002/aisy.202000134 Journal Article 2020
54.	Two-dimensional Materials and Devices : Promising Concepts for Emerging IT Applications Lemme, M. C. (Corresponding author) URL: https://confit.atlas.jp/guide/event/ssdm2020/subject/H-10-01/advanced Abstract 2020
55.	Determining the electrical charging speed limit of ReRAM devices von Witzleben, M. A. (Corresponding author) ; Walfort, S. ; Waser, R. ; Menzel, S. ; ; et al IEEE journal of the Electron Devices Society : J-EDS 9, Seiten/Artikel-Nr.:667-678 DOI: 10.1109/JEDS.2021.3095389 Journal Article 2021
56.	Trade-off between variability and retention of memristive epitaxial SrTiO$_{3}$ devices Rieck, J. L. (Corresponding author) ; Hensling, F. V. E. ; Dittmann, R. APL materials 9(2), Seiten/Artikel-Nr.:021110 DOI: 10.18154/RWTH-2021-03655 Journal Article 2021
57.	Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory Wiefels, S. (Corresponding author) ; von Witzleben, M. A. ; Huttemann, M. ; Böttger, U. ; ; et al IEEE transactions on electron devices 68(3), Seiten/Artikel-Nr.:1024-1030 DOI: 10.18154/RWTH-2021-02225 Journal Article 2021
58.	Approaching the Glass Transition Temperature of GeTe by Crystallizing Ge15Te85 Pries, J. ; Yu, Y. ; Kerres, P. ; Häser, M. ; ; et al Physica status solidi / Rapid research letters Seiten/Artikel-Nr.:2000478 DOI: 10.18154/RWTH-2020-12427 Journal Article 2020
59.	Trade-Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices Siegel, S. (Corresponding author) ; Bäumer, C. ; Gutsche, A. ; von Witzleben, M. A. ; ; et al Advanced electronic materials 7(1), Seiten/Artikel-Nr.:2000815 DOI: 10.18154/RWTH-2020-12365 Journal Article 2020 & 2020
60.	Discovering Electron‐Transfer‐Driven Changes in Chemical Bonding in Lead Chalcogenides (PbX, where X = Te, Se, S, O) Maier, S. ; Steinberg, S. ; Cheng, Y. ; Schön, C.-F. ; ; et al Advanced materials 32(49), Seiten/Artikel-Nr.:2005533 DOI: 10.18154/RWTH-2020-11522 Journal Article 2020
61.	HRS Instability in Oxide-Based Bipolar Resistive Switching Cells Wiefels, S. (Corresponding author) ; Bengel, C. R. ; Kopperberg, N. ; Zhang, K. ; ; et al IEEE transactions on electron devices : ED 67(10), Seiten/Artikel-Nr.:4208-4215 DOI: 10.1109/TED.2020.3018096 Journal Article 2020
62.	Study of the SET switching event of VCM-based memories on a picosecond timescale von Witzleben, M. A. (Corresponding author) ; Kindsmüller, A. ; Menzel, S. ; Waser, R. ; ; et al Journal of applied physics 127, Seiten/Artikel-Nr.:204501 DOI: 10.1063/5.0003840 Journal Article 2020
63.	Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity Belete, M. A. (First author) ; Kataria, S. (Corresponding author) ; Turfanda, A. ; Vaziri, S. ; ; et al Advanced electronic materials 6(3), Seiten/Artikel-Nr.:1900892 DOI: 10.18154/RWTH-2020-00627 Journal Article (Review Article) 2020